Presentation + Paper
20 February 2017 Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm
Author Affiliations +
Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101230V (2017) https://doi.org/10.1117/12.2249302
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
A dual-wavelength diode laser with sub-MHz narrowband emission at 785 nm is presented. The device is investigated for both emission lines up to an optical power of 150 mW. A stable spectral distance between the two laser wavelengths of 0.6 nm (10 cm-1) over the whole power range is achieved. At 20 mW the emission shows a minimum 3 dB width of 250 kHz and below 1 MHz for output powers up to 80 mW. The results demonstrate that besides the already demonstrated suitability of these devices for Raman spectroscopy and shifted excitation Raman difference spectroscopy, the dual-wavelength diode laser have also the potential for sub-MHz spectroscopic applications.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Maiwald, C. Raab, W. Kaenders, B. Sumpf, and G. Tränkle "Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230V (20 February 2017); https://doi.org/10.1117/12.2249302
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KEYWORDS
Semiconductor lasers

Raman spectroscopy

Time metrology

Spectroscopes

Spectroscopy

Waveguides

Electro optics

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