PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We present a reflective Fourier ptychographic microscopy (FPM) with a deep ultraviolet (DUV) laser and a high numerical aperture objective for sub-100nm imaging of an opaque target used in semiconductor device manufacturing. An aperture scanning illumination system designed for a laser with high energy fluence is implemented for angle-varied illumination. Performance of the DUV FPM is evaluated and compared to conventional DUV microscopy by imaging a series of molybdenum silicide (MoSi) multiline with a minimum linewidth of 80 nm, showing that contrast enhancement ratio increases as the linewidth of the target decreases.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Kwan Seob Park, Yoon Sung Bae, Sang-Soo Choi, Martin Y. Sohn, "Reflective deep-ultraviolet Fourier ptychographic microscopy for nanoscale imaging," Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124963L (30 April 2023); https://doi.org/10.1117/12.2666132