Presentation + Paper
10 April 2024 Exploring EUV scanner design options enabled by free electron laser sources
Author Affiliations +
Abstract
An accelerator-based free electron laser (FEL) source of 13.5nm light can, among other benefits, provide more power, polarized light and no out-of-band radiation. This paper explores how the extra power, polarized light and lack of out-of-band radiation could be used in future scanner designs. The differences between light generated from a laser-produced plasma (LPP) source and an FEL source are discussed. Rigorous mask simulation, OPC and source optimization are used to assess the impacts of polarization on contrast and process window for lines/spaces and multiple 2D patterns. Polarization is shown to provide contrast and process window benefits at half-pitches below 8nm. A full-field, isomorphic, 0.55NA scanner design is considered as a case study showcasing the benefits of FEL-based EUV light sources.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Thomas V. Pistor "Exploring EUV scanner design options enabled by free electron laser sources", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530U (10 April 2024); https://doi.org/10.1117/12.3012410
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polarization

Free electron lasers

Mirrors

Semiconducting wafers

Reflectivity

Polarized light

Extreme ultraviolet lithography

RELATED CONTENT

LPP EUV source readiness for NXE 3300B
Proceedings of SPIE (March 18 2014)
LPP source system development for HVM
Proceedings of SPIE (April 07 2011)
Low CoO grazing incidence collectors for EUVL HVM
Proceedings of SPIE (March 23 2012)
3D mask modeling for EUV lithography
Proceedings of SPIE (March 23 2012)

Back to Top