New aqueous base-developable negative-tone photoresist based on furans

James T. Fahey; Jean M. J. Frechet

doi:10.1117/12.46359

1 June 1991 New aqueous base-developable negative-tone photoresist based on furans

James T. Fahey, Jean M. J. Frechet

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46359
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A new versatile negative-tone resist consisting of poly [4- hydroxystyrene-co-4-(3-furyl-3-hydroxypropyl)styrene], and a photoacid generator is described. This chemically amplified resist which shows high sensitivity in the deep-UV (2.3 mJ/cm2) and E-Beam (3.4 (mu) C/cm2) modes, operates on the basis of radiation induced crosslinking via acid-catalyzed electrophilic aromatic substitution. Due to the incorporation of phenolic substituents in the resist design aqueous development without swelling is possible.

Citation Download Citation

James T. Fahey and Jean M. J. Frechet "New aqueous base-developable negative-tone photoresist based on furans", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46359

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