Resonant-cavity photodetectors for optical communications

Suhail S. Murtaza; K. Alex Anselm; Hui Nie; C. Hu; Joe C. Campbell; Ben G. Streetman; J. C. Bean; Larry J. Peticolas

doi:10.1117/12.228864

27 December 1995 Resonant-cavity photodetectors for optical communications

Suhail S. Murtaza, K. Alex Anselm, Hui Nie, C. Hu, Joe C. Campbell, Ben G. Streetman, J. C. Bean, Larry J. Peticolas

Proceedings Volume 2613, Emerging Components and Technologies for All-Optical Networks; (1995) https://doi.org/10.1117/12.228864
Event: Photonics East '95, 1995, Philadelphia, PA, United States

Abstract

The rapid emergence of high-performance optical systems has accentuated the need for photodiodes with enhanced performance and functionality. In this paper we will describe a new class of photodiodes that utilize novel resonant-cavity structures to achieve high speed, high quantum efficiency, and a narrow spectral response which may prove useful for some wavelength division multiplexing applications. The resonant-cavity photodiode consists of a thin absorbing layer sandwiched between two dielectric mirrors. One advantage of this structure is that it can be utilized to circumvent the responsivity/bandwidth tradeoff inherent to conventional PIN photodiodes structures. For the typical normal-incidence photodiode a wide bandwidth necessitates a thin absorption layer which, in turn, results in low quantum efficiency. The resonant-cavity structure, on the other hand, effectively decouples the responsivity from the transit-time component of the bandwidth because the optical signal makes multiple passes across the thin absorbing layer inside the microcavity. The resonant- cavity approach has been utilized for p-i-n photodiodes, phototransistors, dual-wavelength photodetectors, avalanche photodiodes (APDs), and Schottky barrier photodiodes. In this paper we will concentrate on two specific devices, a Si_1-x/Ge_x resonant-cavity p-i-n photodiode and a resonant-cavity APD with separate absorption and multiplication regions.

Citation Download Citation

Suhail S. Murtaza, K. Alex Anselm, Hui Nie, C. Hu, Joe C. Campbell, Ben G. Streetman, J. C. Bean, and Larry J. Peticolas "Resonant-cavity photodetectors for optical communications", Proc. SPIE 2613, Emerging Components and Technologies for All-Optical Networks, (27 December 1995); https://doi.org/10.1117/12.228864

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KEYWORDS

Photodiodes

Mirrors

Absorption

Silicon

Reflectivity

Avalanche photodetectors

Quantum efficiency

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