Optimization of the negative prechirping Franz-Keldysh InGaAsP bulk electroabsorption modulator

Byeong-Gee Kim; Jeong-Ho Lee; Young-Wan Choi

doi:10.1117/12.275590

6 June 1997 Optimization of the negative prechirping Franz-Keldysh InGaAsP bulk electroabsorption modulator

Byeong-Gee Kim, Jeong-Ho Lee, Young-Wan Choi

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275590
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We perform structural optimization of negative prechirping Franz-Keldydh InGaAsP bulk electroabsorption (EA) modulator in terms of transmission change and waveguide length. For the optimization, we calculate the chirp parameter ((alpha) _c) of EA modulator from the slope of n versus k curve. In the optimization process, for a given (alpha) _c and modulation voltage change we calculate contrast ratio, propagation loss, optimal waveguide length, optimal transmission change varying intrinsic region thickness and bandgap wavelength. Detailed results on optimized structures are presented.

Citation Download Citation

Byeong-Gee Kim, Jeong-Ho Lee, and Young-Wan Choi "Optimization of the negative prechirping Franz-Keldysh InGaAsP bulk electroabsorption modulator", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275590

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