Ultrashort-pulse-laser-induced fine structure in synthetic fused silicas

Jianbe Qiu; Akio Makishima; Takashi Uchino; Yoji Kawamoto

doi:10.1117/12.546797

14 June 2004 Ultrashort-pulse-laser-induced fine structure in synthetic fused silicas

Jianbe Qiu, Akio Makishima, Takashi Uchino, Yoji Kawamoto

Proceedings Volume 5350, Optical Components and Materials; (2004) https://doi.org/10.1117/12.546797
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Properties of defects induced by irradiation with a near-infrared femtosecond laser into a series of synthetic fused silicas containing different OH contents are reported. Comparing with the samples before laser irradiation, two absorption bands centered around at 4.8 and 5.8 eV which correspond to E'(≡Si•) center and non-bridging oxygen hole center (NBOHC, ≡Si--O•), respectively, were evidently observed after laser irradiation in high-OH silicas. A photluminescence band with photon energy of 1.9 eV was observed in the as-irradiated silicas under 4.8 eV light excitation. Though no red photoluminescence was observed after irradiated inside low OH-containing silica samples, a similar phenomenon occurs when the laser beam was focused near the surface of low-OH silicas. The induced structures were relaxed after annealing at 400°C. A possible model for the generation of 1.9 eV photoluminescence induced by ultrashort pulse laser in wet silicas and dry silicas was proposed.

Citation Download Citation

Jianbe Qiu, Akio Makishima, Takashi Uchino, and Yoji Kawamoto "Ultrashort-pulse-laser-induced fine structure in synthetic fused silicas", Proc. SPIE 5350, Optical Components and Materials, (14 June 2004); https://doi.org/10.1117/12.546797

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