Paper
4 May 2005 Interfacial structure of photoresist thin films in developer solutions
Vivek M. Prabhu, Bryan D. Vogt, Wen-Li Wu, Jack F. Douglas, Eric K. Lin, Sushil K. Satija, Dario L. Goldfarb, Hiroshi Ito
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Abstract
A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.
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Vivek M. Prabhu, Bryan D. Vogt, Wen-Li Wu, Jack F. Douglas, Eric K. Lin, Sushil K. Satija, Dario L. Goldfarb, and Hiroshi Ito "Interfacial structure of photoresist thin films in developer solutions", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598956
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KEYWORDS
Polymers

Reflectivity

Interfaces

Ionization

Photoresist materials

Dielectrics

Photoresist developing

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