Paper
20 May 2009 Research on high-speed deposition thermodynamics characteristic for DLC thin film by RF-PECVD
Mi Zhu, Changxin Xiong, Changcheng Yang
Author Affiliations +
Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72821B (2009) https://doi.org/10.1117/12.830867
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
Diamond-like carbon (DLC) thin film is often used on the surface of Infrared windows as the protecting film. PECVD method is one of the principal ways to obtain DLC film. The key factors, which affect the deposition rate of DLC film, and how to achieve high speed rate have been analyzed in this work. We prepared high-speed deposition DLC film samples on Germanium and Silicon by RF-PECVD, and the relationships between deposition rate, RF power, vacuum degree and dimension size of substrates, deposition temperature have been investigated. We found that when the deposition temperature rises, the deposition rate would rise correspondingly but fall down later. According to MIL-48616 environmental stability standards, the environmental and physical durability test results and the curve of spectrum are also presented in detail in the paper.
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Mi Zhu, Changxin Xiong, and Changcheng Yang "Research on high-speed deposition thermodynamics characteristic for DLC thin film by RF-PECVD", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72821B (20 May 2009); https://doi.org/10.1117/12.830867
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KEYWORDS
Germanium

Silicon

Carbon

Thermodynamics

Thin films

Electrodes

Plasma

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