Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness

Tao Wang; Junsheng Yu; Jun Wang; Lu Li; Yadong Jiang

doi:10.1117/12.831023

21 May 2009 Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness

Tao Wang, Junsheng Yu, Jun Wang, Lu Li, Yadong Jiang

Author Affiliations +

Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72823A (2009) https://doi.org/10.1117/12.831023
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China

Abstract

Multilayer organic light-emitting diodes are fabricated with a structure of ITO/CuPc/NPB/CBP:(t-bt)₂Ir(acac)/BCP/Alq/LiF:Al, and the current density vs voltage characteristic of organic phosphorescent devices is investigated. The current density characteristics of triple-layer devices with different emission layer thickness is simulated into three regions, which are no-emission region, emission region and saturated region, corresponding to ohmic contact model, trap charge limited current model and space charge limited current model. The film thickness of emission layer shows obvious effect on the device current density.

Citation Download Citation

Tao Wang, Junsheng Yu, Jun Wang, Lu Li, and Yadong Jiang "Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72823A (21 May 2009); https://doi.org/10.1117/12.831023

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