Paper
1 May 2014 Cross-absorption as a limit to heralded silicon photon pair sources
Chad A. Husko, Alex S. Clark, Matthew J. Collins, Alfredo De Rossi, Sylvain Combrié, Gaëlle Lehoucq, Isabella Rey, Thomas F. Krauss, Chunle Xiong, Benjamin J. Eggleton
Author Affiliations +
Abstract
In recent years integrated waveguide devices have emerged as an attractive platform for scalable quantum tech- nologies. In contrast to earlier free-space investigations, one must consider additional effects induced by the media. In amorphous materials, spontaneous Raman scattered photons act as a noise source. In crystalline materials two-photon absorption (TPA) and free carrier absorption (FCA) are present at large intensities. While initial observations noted TPA affected experiments in integrated semiconductor devices, at present the nuanced roles of these processes in the quantum regime is unclear. Here, using single photons generated via spontaneous four-wave mixing (SFWM) in silicon, we experimentally demonstrate that cross-TPA (XTPA) between a classical pump beam and generated single photons imposes an intrinsic limit on heralded single photon generation, even in the single pair regime. Our newly developed model is in excellent agreement with experimental results.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chad A. Husko, Alex S. Clark, Matthew J. Collins, Alfredo De Rossi, Sylvain Combrié, Gaëlle Lehoucq, Isabella Rey, Thomas F. Krauss, Chunle Xiong, and Benjamin J. Eggleton "Cross-absorption as a limit to heralded silicon photon pair sources", Proc. SPIE 9136, Nonlinear Optics and Its Applications VIII; and Quantum Optics III, 91361O (1 May 2014); https://doi.org/10.1117/12.2052211
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Single photon

Silicon

Absorption

Indium gallium phosphide

Sensors

Waveguides

Data modeling

Back to Top