Paper
27 February 2015 Co-existence of harmonic generation and two-photon luminescence in selectively grown coaxial InGaN/GaN quantum wells on GaN pyramids
Sween Butler, Mohamed Fikry, Manfred Madel, Klaus Thonke, Arup Neogi
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Abstract
Nonlinear optical properties of coaxial InGaN/GaN multiple quantum well (MQWs) submicron hetero-structures were investigated using a tunable femtosecond laser at room temperature. Co-axial InGaN/GaN MQW hetero-structures were fabricated by depositing InGaN/GaN layers on the side walls of GaN submicron tubes on top of GaN micro-pyramids. Excitation and signal collection from a single micro-structure was achieved using multi-photon spectroscopy. Two photon excited photoluminescence (TPEL) was observed at around 390 nm independent of excitation wavelength. In addition to TPEL, observation of second harmonic signal of the excitation laser is also presented.
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Sween Butler, Mohamed Fikry, Manfred Madel, Klaus Thonke, and Arup Neogi "Co-existence of harmonic generation and two-photon luminescence in selectively grown coaxial InGaN/GaN quantum wells on GaN pyramids", Proc. SPIE 9347, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 93470V (27 February 2015); https://doi.org/10.1117/12.2079855
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KEYWORDS
Gallium nitride

Quantum wells

Luminescence

Zinc oxide

Harmonic generation

Indium gallium nitride

Second-harmonic generation

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