Low variability metal pitch scaling with directed self-assembly

Gurpreet Singh

doi:10.1117/12.2623266

7 June 2022 Low variability metal pitch scaling with directed self-assembly

Gurpreet Singh

Proceedings Volume PC12054, Novel Patterning Technologies 2022; PC1205401 (2022) https://doi.org/10.1117/12.2623266
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Scaling of patterning technologies has played a fundamental role in the ever-improving semiconductor products. Continued scaling needs state-of-the-art patterning to meet three critical challenges: the ability to print at tight pitch, the ability to place patterns accurately with respect to each other and the ability to deal with pattern variations. 0.33NA extreme-UV lithography (EUV) can now print sub-30nm pitch features with improved pattern placement accuracy due to less overlay steps. Complementary patterning methods like spacer-based double patterning (SADP) in conjunction with EUV can therefore enable sub-20nm pitch features. However, at these tight-pitch features variations in the critical dimension due to photon shot-noise and resist stochastics will absorb a significant portion of the edge-placement-error (EPE) budget. Directed self-assembly (DSA) is a powerful patterning technique to pattern dense, periodic features with low number of defects and with pattern uniformity not readily achieved by optical lithography alone. This presentation will show a fully integrated flow to create low-defectivity, low line-edge-roughness (LER) p18nm gratings with self-aligned plugs by synergistically combining EUV, DSA and SADP and show scalability down to sub p13nm gratings.

Conference Presentation

Citation Download Citation

Gurpreet Singh "Low variability metal pitch scaling with directed self-assembly", Proc. SPIE PC12054, Novel Patterning Technologies 2022, PC1205401 (7 June 2022); https://doi.org/10.1117/12.2623266

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