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Micro-Light emitting diodes (µLEDs) are attracting broad interest because of their low power consumption, compact size and high brightness. However, µLEDs suffer from low outcoupling efficiency due to the high refractive index mismatch between air and the semiconductor. Recent progress in nanophotonics has led to the demonstration that metasurfaces integrated with emitters can provide an opportunity for tailoring the emission. We have designed and fabricated plasmonic metasurfaces onto a GaN/sapphire wafers to tailor the emission of InGaN quantum wells for µLEDs. We have investigated the far-field photoluminescence emission of samples with different metasurfaces, optimizing the light emission and outcoupling.
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Mohamed S. Abdelkhalik, Aleksande V. Vaskin, Toni López, Anton Matthijs Berghuis, Aimi Abass, Jaime Gómez Rivas, "Green µLEDs beamed emission using resonant modes in plasmonic metasurfaces," Proc. SPIE PC12648, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XXI, PC1264819 (5 October 2023); https://doi.org/10.1117/12.2676472