Presentation
22 November 2023 Application of SONR for a better OPC model with a EUV curvilinear photomask
Author Affiliations +
Abstract
Pattern sampling for good OPC models becomes more complex when we consider the nature of a full curvilinear photomasks. Due to the continuously changing angle of post-OPC edges, all angle diffraction spectrum are created in the scanner pupil entrance. For modeling test patterns to cover the possible OPC shapes, various dimensions and curvatures are taken into consideration in the test pattern design. Compared to Manhattan patterns, curvilinear patterns in OPC model calibration requires a multitude of variables to obtain the same coverage. To make the data sampling more effective and efficient, a machine learning-based fuzzy classification of feature vectors is applied. SONR is used to cluster similar patterns based on factors directly related to printability. Then, a representative cluster is chosen to guarantee full coverage of different patterns on the full chip level. These patterns are then used to calibrate OPC models.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-I Wei, Rehab Kotb Ali, Andrew Burbine, Fan Jiang, Germain Fenger, Seulki Kang, Kotaro Maruyama, Yuichiro Yamazaki, Sujan Sarkar, Matteo Beggiato, Youssef Drissi, Werner Gillijns, Christophe Beral, Sandip Halder, Gian Lorusso, and Philippe Leray "Application of SONR for a better OPC model with a EUV curvilinear photomask", Proc. SPIE PC12751, Photomask Technology 2023, PC127510Q (22 November 2023); https://doi.org/10.1117/12.2687822
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KEYWORDS
Optical proximity correction

Extreme ultraviolet

Photomasks

Calibration

Data modeling

Machine learning

Modeling

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