Narrow Diffused Stripe GaAs/GaAlAs Lasers For High Speed Integrated Optical Transmitters

C. S. Hong; J. J. Coleman; P. D. Dapkus; D. E. Thompson; M. E. Kim

doi:10.1117/12.933230

27 August 1982 Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters

C. S. Hong, J. J. Coleman, P. D. Dapkus, D. E. Thompson, M. E. Kim

Proceedings Volume 0321, Integrated Optics II; (1982) https://doi.org/10.1117/12.933230
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Deep Zn diffused stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition for fiber optic transmitter applications are reported. Stripe widths of 2, 4, and 8 pm are examined in terms of laser threshold currents and far-field radiation patterns. For lasers with a 4 pm stripe, threshold currents as low as 40 mA, a characteristic temperature as large as 170°C, and external differential quantum efficiencies as high as 80-90% are obtained. Single mode operation of these lasers is observed. Preliminary results on the device uniformity and high-speed modulation characteristics are includded.

Citation Download Citation

C. S. Hong, J. J. Coleman, P. D. Dapkus, D. E. Thompson, and M. E. Kim "Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters", Proc. SPIE 0321, Integrated Optics II, (27 August 1982); https://doi.org/10.1117/12.933230

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