Paper
30 November 1983 GaAs Integrated Optoelectronics
L. R. Tomasetta, M. E. Kim, C. -S . Hong, R. A. Milano
Author Affiliations +
Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935713
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
As data rates and pin counts increase interconnection of chips, boards and modules will become increasingly difficult by conventional means. Optical interconnection through the use of high speed serial optical links will be an attractive and viable alternative technique. GaAs optical and electronic device technology has advanced to the stage where the monolithic integration of both components is possible. While initial implementations will be rather simple, it is now possible to project that in the next ten years VLSI complexity circuits incorporating both optical and electronics functions will become a reality.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. R. Tomasetta, M. E. Kim, C. -S . Hong, and R. A. Milano "GaAs Integrated Optoelectronics", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); https://doi.org/10.1117/12.935713
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Cited by 2 scholarly publications.
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KEYWORDS
Gallium arsenide

Field effect transistors

Optoelectronics

Electronic components

Integrated optics

Silicon

Integrated circuits

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