An Ultra High Temperature Positive Photoresist

John Grunwald; Edwin J. Turner; Allen C. Spencer; David A. Sawoska; Giyora Ben-Shushan

doi:10.1117/12.947843

18 April 1985 An Ultra High Temperature Positive Photoresist

John Grunwald, Edwin J. Turner, Allen C. Spencer, David A. Sawoska, Giyora Ben-Shushan

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947843
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

This paper discusses the functional performance features of a new positive photoresist designated as ULTRAMAC' PR78T that can be subjected to temperatures up to 220°C. without any changes in the critical dimensions (CD's). No deep UV stabilization, intermediate post bakes, or other stabilization techniques are required to achieve high temperature thermal stability (220°C.). This high temperature positive photoresist is based on a diazo-coupled alkali soluble resin. The resolution and photospeed of this resist, ULTRAMAC' PR78T, are shown to be in the order of 1 micron using a 1.5 microns resist film thickness at 44 mJ/cm². This resist also has submicron capabilities using step-and-repeat exposure equipment (10:1) utilizing monochromatic 436 nanometer light. ULTRAMAC' PR78T resist shows optimum sensitivity in the 300 - 500 nanometer UV spectral range. In contact or projection exposure equipment, resolution in the order of 1 micron can be achieved using a 1 micron resist film with exposure energies of about 35 mJ/cm². For steppers using monochromatic light at 436 nanometers, typical exposure energies are in the order of 160 to 180 mJ/cm², using either metal-ion-free or buffered metal based developers. Contrast (gamma) curves are shown for both metal-ion-free developer, ULTRAMAC' MF72A, and buffered metal containing developer, ULTRAMAC" D71A. High current ion implant data is also presented, showing no resist degradation. Anisotropic plasma/RIE etching selectivity data is also shown on SiO₂ and aluminum alloy substrates.

Citation Download Citation

John Grunwald, Edwin J. Turner, Allen C. Spencer, David A. Sawoska, and Giyora Ben-Shushan "An Ultra High Temperature Positive Photoresist", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947843

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available