Order-Disorder Transitions In Strained Semiconductor Systems

A. Ourmazd; J. C. Bean

doi:10.1117/12.961186

26 June 1986 Order-Disorder Transitions In Strained Semiconductor Systems

A. Ourmazd, J. C. Bean

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961186
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

We describe the observation of a strain-induced order-disorder transition in the alloy layers of a GeSi/Si superlattice and discuss the possible implications of the transition for the opto-electronic properties of this important system.

Citation Download Citation

A. Ourmazd and J. C. Bean "Order-Disorder Transitions In Strained Semiconductor Systems", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961186

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