Recent Progress In Epitaxial Growth Of Semiconducting Materials On Stabilized Zirconia Single Crystals.

L. M. Mercandalli; D. Dieumegard; M. Croset; J. Siejka

doi:10.1117/12.961209

26 June 1986 Recent Progress In Epitaxial Growth Of Semiconducting Materials On Stabilized Zirconia Single Crystals.

L. M. Mercandalli, D. Dieumegard, M. Croset, J. Siejka

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961209
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The present understanding of the properties of heteroepitaxial Si films grown on yttria stabilized zirconia single crystals (YSZ) is reviewed with particular emphasis on the properties of Si films resulting from high temperature post oxidation treatment. The crystalline, physic() chemical and electrical properties of Si films obtained by pyrolysis of SiH4 have been characterized by various analytical techniques. The results indicate that under carefully controlled deposition conditions, the crystalline quality (density of defects, of grain boundaries ....) is better for Si deposited on YSZ (SOZ structure), than for Si deposited on sapphire (SOS structure). The Si films, as deposited on YSZ, are highly resistive (cil -,_, 105 Q cm) ; a high temperature annealing in neutral atmosphere improves the quality of the films. In contrast to SOS, self doping is absent in SOZ structures (p lir O. cm). Further

Citation Download Citation

L. M. Mercandalli, D. Dieumegard, M. Croset, and J. Siejka "Recent Progress In Epitaxial Growth Of Semiconducting Materials On Stabilized Zirconia Single Crystals.", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961209

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