Presentation + Paper
25 February 2017 Hybrid vertical-cavity laser integration on silicon
Emanuel P. Haglund, Sulakshna Kumari, Johan S. Gustavsson, Erik Haglund, Gunther Roelkens, Roel G. Baets, Anders Larsson
Author Affiliations +
Abstract
The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emanuel P. Haglund, Sulakshna Kumari, Johan S. Gustavsson, Erik Haglund, Gunther Roelkens, Roel G. Baets, and Anders Larsson "Hybrid vertical-cavity laser integration on silicon", Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220H (25 February 2017); https://doi.org/10.1117/12.2256983
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Interfaces

Dielectrics

Modulation

Waveguides

Oxides

Semiconductor lasers

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