Advances in semipolar InGaN laser diodes (Conference Presentation)

Mel McLaurin; James Raring; Christiane Poblenz; Paul Rudy; Georg Aigeldinger; Eric Goutain; Hua Huang

doi:10.1117/12.2251721

20 April 2017 Advances in semipolar InGaN laser diodes (Conference Presentation)

Mel McLaurin, James Raring, Christiane Poblenz, Paul Rudy, Georg Aigeldinger, Eric Goutain, Hua Huang

Author Affiliations +

Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 1012307 (2017) https://doi.org/10.1117/12.2251721
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We present state-of-the-art performance from laser based light sources based on semipolar GaN. Recent advances toward the commercialization of blue, InGaN semipolar laser diodes are described. Additionally, we introduce next generation white light sources based on laser-pumped phosphor architectures.

Conference Presentation

Citation Download Citation

Mel McLaurin, James Raring, Christiane Poblenz, Paul Rudy, Georg Aigeldinger, Eric Goutain, and Hua Huang "Advances in semipolar InGaN laser diodes (Conference Presentation)", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 1012307 (20 April 2017); https://doi.org/10.1117/12.2251721

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE