Paper
28 March 2017 Metrology capabilities and needs for 7nm and 5nm logic nodes
Author Affiliations +
Abstract
This paper will provide a high level overview of the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry, concentrating on logic applications. First, we will take a broad view of the needs of patterned defect, critical dimensional (CD/3D), overlay and films metrology, and present the extensive list of applications for which metrology solutions are needed. Commonalities and differences among the various applications will be shown. We will then report on the gating technical limits of the most important of these metrology solutions to address the metrology challenges of future nodes, highlighting key metrology technology gaps requiring industry attention and investment
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Bunday, Eric Solecky, Alok Vaid, A. F. Bello, and Xintuo Dai "Metrology capabilities and needs for 7nm and 5nm logic nodes", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450G (28 March 2017); https://doi.org/10.1117/12.2260870
Lens.org Logo
CITATIONS
Cited by 13 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metrology

Critical dimension metrology

Silicon

Scanning electron microscopy

3D metrology

X-rays

Overlay metrology

RELATED CONTENT

Gaps analysis for CD metrology beyond the 22nm node
Proceedings of SPIE (April 10 2013)
Semiconductor metrology for the 3D era
Proceedings of SPIE (January 01 1900)
HVM metrology challenges towards the 5nm node
Proceedings of SPIE (March 24 2016)

Back to Top