Line end shortening and iso-dense etch bias improvement by ALD spacer shrink process

Rui Chen; Granger Lobb; Aleksandra Clancy; Bradley Morgenfeld; Shyam Pal

doi:10.1117/12.2260450

27 March 2017 Line end shortening and iso-dense etch bias improvement by ALD spacer shrink process

Rui Chen, Granger Lobb, Aleksandra Clancy, Bradley Morgenfeld, Shyam Pal

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101461D (2017) https://doi.org/10.1117/12.2260450
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Abstract Multiple patterning employing etch shrink extends the scaling of hardmask open CD (HCD) to sub-50nm regime. A plasma-assisted shrink technique is primarily used in the back-end-of-line (BEOL) however it faces major challenges such as the line end shortening (LES) and large critical dimension iso-dense bias (IDB). In order to mitigate these two problems we apply an atomic layer deposition (ALD) spacer shrink process at 10nm metal interconnect layer with sub-20nm minimum half-pitch. As a result we observed 8nm LES improvement in tip-to-tip (T2T) two-dimensional (2D) structures, and 5nm IDB reduction in one-dimensional (1D) structures. These improvements suggest that the ALD spacer shrink can contribute to more precise CD control in multiple patterning.

Conference Presentation

Citation Download Citation

Rui Chen, Granger Lobb, Aleksandra Clancy, Bradley Morgenfeld, and Shyam Pal "Line end shortening and iso-dense etch bias improvement by ALD spacer shrink process", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461D (27 March 2017); https://doi.org/10.1117/12.2260450

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