Elementary Surface Steps In The Dry Chemical Processing Of Semiconductor Materials

A Wee; A J Murrell; R J Price; R B Jackman; J S Foord

doi:10.1117/12.950640

18 May 1989 Elementary Surface Steps In The Dry Chemical Processing Of Semiconductor Materials

A Wee, A J Murrell, R J Price, R B Jackman, J S Foord

Proceedings Volume 1033, Trends in Quantum Electronics; (1989) https://doi.org/10.1117/12.950640
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania

Abstract

The role of surface chemical reactions within semiconductor processing is considered by way of two recently studied systems. The first is the reaction of chlorine with indium phosphide, which underlies the direct "dry" etching of the semiconductor material. The adsorbed states which form have been studied at a molecular level and the results discussed in terms of thermally driven etching schemes. In addition non-thermal stimulation of reactions at the halogen-semiconductor interface is considered and results for ion beam enhanced processes are presented. The second system discussed is Al deposition from trimethyl aluminium on Si. Phases formed at the semiconductor-vapour interface are characterised and the thermal decomposition routes leading to aluminium deposition have been studied. The influence of UV irradiation on the processes occurring are identified.

Citation Download Citation

A Wee, A J Murrell, R J Price, R B Jackman, and J S Foord "Elementary Surface Steps In The Dry Chemical Processing Of Semiconductor Materials", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); https://doi.org/10.1117/12.950640

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