Measurement Of Semiconductor Laser Linewidth Enhancement Factor Using Coherent Optical Feedback

Ki-Hyun Chung; John G. McInerney; Marek Osinski

doi:10.1117/12.976369

22 June 1989 Measurement Of Semiconductor .Laser Linewidth Enhancement Factor Using Coherent Optical Feedback

Ki-Hyun Chung, John G. McInerney, Marek Osinski

Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976369
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

The linewidth enhancement factor a of a semiconductor injection laser is defined to be the ratio of the changes in the real and imaginary parts of the complex susceptibility of the laser medium due to carrier density variations. We have devised a novel method for measuring this parameter by observing the changes in the optical frequency and external quantum efficiency due to coherent optical feedback. The wavelength dependence of a close to the room-temperature gain peak was measured for GaAs/GaAlAs channeled-substrate-planar devices.

Citation Download Citation

Ki-Hyun Chung, John G. McInerney, and Marek Osinski "Measurement Of Semiconductor .Laser Linewidth Enhancement Factor Using Coherent Optical Feedback", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); https://doi.org/10.1117/12.976369

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