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14 March 2018 InP-on SOI nanophotonic optoelectronic devices (Conference Presentation)
Fabrice Raineri, Guillaume Crosnier, Dimitris Fitsios, Francesco Manegatti, Rama Raj, Nhung Vu, Dorian Sanchez
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Proceedings Volume 10540, Quantum Sensing and Nano Electronics and Photonics XV; 105401F (2018) https://doi.org/10.1117/12.2289776
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
The convergence of microelectronics and photonics on a single chip is one of the greatest challenges of present research. To make it happen, it is necessary to develop an entire novel class of optoelectronic devices exhibiting far beyond the state-of-the-art performance in term of compactness, speed and power efficiency. Silicon photonics enhanced with III-V semiconductors such as InP-based materials is the key technology to provide a platform able with all the necessary functionalities but it is only through the exploitation of nanophotonics concepts that disruptive performance can be reached. During this presentation, we will show our latest results obtained on electrically powered InP-on-SOI photonic crystal devices. These results will concern first the demonstration of nanolaser diodes emitting at 1.55µm in a SOI waveguide with a wall-plug efficiency higher than 10%. The developed electrical injection scheme allows us, also, to conceive nano-amplifiers and electro-optical modulators which show promising features for their integration in a photonic circuit.
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Fabrice Raineri, Guillaume Crosnier, Dimitris Fitsios, Francesco Manegatti, Rama Raj, Nhung Vu, and Dorian Sanchez "InP-on SOI nanophotonic optoelectronic devices (Conference Presentation)", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401F (14 March 2018); https://doi.org/10.1117/12.2289776
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KEYWORDS
Nanophotonics
Modulators
Optoelectronic devices
Silicon photonics
Amplifiers
Group III-V semiconductors
Indium
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