Advanced combined overlay and CD uniformity measurement mark for double patterning

Hsiao Lin Hsu; En Chuan Lio; Charlie Chen; Jia Hung Chang; Sho Shen Lee; Stefan Buhl; Manuela Gutsch; Patrick Lomtscher; Martin Freitag; Boris Habets; Rex Liu

doi:10.1117/12.2299299

13 March 2018 Advanced combined overlay and CD uniformity measurement mark for double patterning

Hsiao Lin Hsu, En Chuan Lio, Charlie Chen, Jia Hung Chang, Sho Shen Lee, Stefan Buhl, Manuela Gutsch, Patrick Lomtscher, Martin Freitag, Boris Habets, Rex Liu

Author Affiliations +

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 105851H (2018) https://doi.org/10.1117/12.2299299
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Advanced processing methods like multiple patterning necessitate improved intra-layer uniformity and balancing monitoring for overlay and CD. To achieve those requirements without major throughout impact, a new advanced mark for measurement is introduced. Based on an optical measurement, this mark delivers CD and overlay results for a specified layer at once. During the conducted experiments at front-end-of-line (FEOL) process area, a mark selection is done and the measurement capability of this mark design is verified. Gathered results are used to determine lithography to etch biases and intra-wafer signatures for CD and overlay. Furthermore, possible use cases like dose correction recipe creation and process signature monitoring were discussed.

Citation Download Citation

Hsiao Lin Hsu, En Chuan Lio, Charlie Chen, Jia Hung Chang, Sho Shen Lee, Stefan Buhl, Manuela Gutsch, Patrick Lomtscher, Martin Freitag, Boris Habets, and Rex Liu "Advanced combined overlay and CD uniformity measurement mark for double patterning", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105851H (13 March 2018); https://doi.org/10.1117/12.2299299

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