Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

Xiaoli Li; Kai Ding; Jian Liu; Junxuan Gao; Weifeng Zhang

doi:10.1117/12.2295329

12 January 2018 Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

Xiaoli Li, Kai Ding, Jian Liu, Junxuan Gao, Weifeng Zhang

Author Affiliations +

Proceedings Volume 10619, 2017 International Conference on Optical Instruments and Technology: Advanced Laser Technology and Applications; 106190N (2018) https://doi.org/10.1117/12.2295329
Event: International Conference on Optical Instruments and Technology 2017, 2017, Beijing, China

Abstract

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm^-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Citation Download Citation

Xiaoli Li, Kai Ding, Jian Liu, Junxuan Gao, and Weifeng Zhang "Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics", Proc. SPIE 10619, 2017 International Conference on Optical Instruments and Technology: Advanced Laser Technology and Applications, 106190N (12 January 2018); https://doi.org/10.1117/12.2295329

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