Paper
1 October 2018 Technology and characterization of HgCdTe photodiode with a strengthened passivation
Author Affiliations +
Proceedings Volume 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018; 108080V (2018) https://doi.org/10.1117/12.2501591
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 2018, Wilga, Poland
Abstract
This paper describes the technology and characterization of HgCdTe photodetectors developed in Vigo System S.A.. Four different variations of devices have been made which include different substrate types and different passivation coatings. CdTe passivation and anodization have been compared. Additionally, both passivations have been strengthened using a negative photoresist SU-8. As fabricated devices have been destined to work as infrared radiation detectors, there has been performed a current measurement for reverse polarization. Based on current-voltage characteristics, current densities have been calculated and compared among fabricated photodiodes to find the best solution of examined passivations.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Pedryc, A. Martychowiec, and A. Kociubiński "Technology and characterization of HgCdTe photodiode with a strengthened passivation", Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108080V (1 October 2018); https://doi.org/10.1117/12.2501591
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KEYWORDS
Photodiodes

Mercury cadmium telluride

Annealing

Diodes

Heterojunctions

Photodetectors

Doping

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