3D NTD resist deformation compact model for OPC and ILT applications

Rich Wu; Delian Yang; Folarin Latinwo; Kevin Lucas; Hua Song

doi:10.1117/12.2501992

8 October 2018 3D NTD resist deformation compact model for OPC and ILT applications

Rich Wu, Delian Yang, Folarin Latinwo, Kevin Lucas, Hua Song

Proceedings Volume 10810, Photomask Technology 2018; 108101A (2018) https://doi.org/10.1117/12.2501992
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

The model accuracy for Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) applications is a critical factor for patterning success in advanced technology nodes. One difficult challenge has been the accurate and fast simulation of Negative Tone Development (NTD) photoresist processes. It has been widely observed that CD measurements, top-down SEM contour images and X-section or AFM resist side wall profile measurements cannot be adequately predicted by conventional lithography process models, e.g., [1]. Therefore, conventional OPC models were often unable to meet the demanding accuracy requirements of advanced logic or memory manufacturing. A key to achieving the demanding model accuracy requirements in NTD photoresist processes is to consider the photoresist shrinkage effects both in the Post-Exposure-Bake (PEB) step and photoresist development process step. Starting from continuum elastic mechanics, e.g., [2], we have developed a fast and accurate full 3D compact shrinkage model and validated its accuracy and usefulness vs. experimental results for several advanced processes and vs. rigorous simulation using a full physical lattice model. The compact model captures the significant photoresist shrinkage and deformation behaviors such as surface topography, resist sidewall angle (SWA) and layout pattern dependency [3], with much faster runtime capable of use in OPC and ILT mask data optimization. The speed and flexibility of the model are such that it can also be applied to help increase accuracy of simulation for some complex physical behaviors seen in other photoresist processes such as EUV and positive tone develop (PTD) photoresist.

Conference Presentation

Citation Download Citation

Rich Wu, Delian Yang, Folarin Latinwo, Kevin Lucas, and Hua Song "3D NTD resist deformation compact model for OPC and ILT applications", Proc. SPIE 10810, Photomask Technology 2018, 108101A (8 October 2018); https://doi.org/10.1117/12.2501992

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available