Paper
4 March 2019 Low loss germanium-on-silicon waveguides for integrated mid-infrared photonics
R. W. Millar, K. Gallacher, U. Griskeviciute, L. Baldassarre, M. Sorel, M. Ortolani, D. J. Paul
Author Affiliations +
Proceedings Volume 10923, Silicon Photonics XIV; 109230S (2019) https://doi.org/10.1117/12.2510009
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Low loss Ge-on-Si waveguides are demonstrated in the 8 – 14 μm atmospheric transmission window, a technology that will enable detection and sensing of unique molecular vibrations. Such a low cost platform would have applications in key markets such as pollution monitoring, explosives detection and point of care diagnostics. Rib-waveguides are fabricated using electron beam lithography and dry etching. The waveguides propagation losses are characterized using the Fabry-Perot technique, and are found to be below 5 dB/cm across the measurement range of 7.5 to 11 μm wavelength, reaching as low as ~ 1 dB/cm. The contribution to the losses are analyzed using the experimentally measured Si substrate losses, and the calculated scattering losses from an analytical model. The results verify the feasibility of the Ge-on-Si platform for integrated mid-infrared photonics and sensing.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. W. Millar, K. Gallacher, U. Griskeviciute, L. Baldassarre, M. Sorel, M. Ortolani, and D. J. Paul "Low loss germanium-on-silicon waveguides for integrated mid-infrared photonics", Proc. SPIE 10923, Silicon Photonics XIV, 109230S (4 March 2019); https://doi.org/10.1117/12.2510009
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Waveguides

Silicon

Germanium

Absorption

Mid-IR

Photonics

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