Radiation hardness of semiconductor single photon detection structure

Vit Sopko; Bruno Sopko; Vladislav Pisa; Josef Blazej

doi:10.1117/12.2521042

30 April 2019 Radiation hardness of semiconductor single photon detection structure

Vit Sopko, Bruno Sopko, Vladislav Pisa, Josef Blazej

Proceedings Volume 11027, Quantum Optics and Photon Counting 2019; 110270L (2019) https://doi.org/10.1117/12.2521042
Event: SPIE Optics + Optoelectronics, 2019, Prague, Czech Republic

Abstract

The detection structure, it has been used in this experiment is employed for producing a single photon detector. The experiment was based on the analysis of changes in this low noise structure of a single photon detector in connection with its radiation damage in the event of neutron flux exposure. For the analysis of the radiation damaged structure was used the Zero Bias Thermally stimulated current method to explore the possibilities of filling traps with light sources. The filling of traps with photons emitted from LEDs or a flash device is compared on a neutron irradiated Si detector. The results of this experiment are used to increase the radiation hardness of manufactured single photon detection structures.

Citation Download Citation

Vit Sopko, Bruno Sopko, Vladislav Pisa, and Josef Blazej "Radiation hardness of semiconductor single photon detection structure", Proc. SPIE 11027, Quantum Optics and Photon Counting 2019, 110270L (30 April 2019); https://doi.org/10.1117/12.2521042

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