Multimode interference-Based 1 x 8 optical power splitter using GaN semiconductors

Dini Fithriaty Puspohadiningrum; Anita Ratnasari; Maratul Hamidah; Muhammad Raditya Gumelar; Nji Raden Poespawati; Retno Wigajatri Purnamaningsih

doi:10.1117/12.2503369

11 April 2019 Multimode interference-Based 1 x 8 optical power splitter using GaN semiconductors

Dini Fithriaty Puspohadiningrum, Anita Ratnasari, Maratul Hamidah, Muhammad Raditya Gumelar, Nji Raden Poespawati, Retno Wigajatri Purnamaningsih

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Proceedings Volume 11044, Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018); 110440P (2019) https://doi.org/10.1117/12.2503369
Event: Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018), 2018, Surabaya, Indonesia

Abstract

The introduced design is a 1 × 8 optical power splitter using MMI structure and taper output branches in GaN semiconductors. The design has been conducted theoretically using 3D FD-OptiBPM to improve the power distribution. The modelling structure used 300 nm AlN and 200 nm AlGaN as the buffer layer on Sapphire respectively. The numerical experiment is carried out at an optical telecommunication wavelength at λ = 1.55 μm. The refractive indices of the layers used are n_TE = 2.279 ± 0.001 and n_TM = 2.316 ± 0.001. The result showed that the optimum width and thickness of input and output rib waveguides are 4 μm and support only single mode propagation. The MMI-based optical power splitter with a length of 2010 μm and a width of 85 μm is the best result. In this proposed design, the output power splitted in almost uniform into eight output branches. It is also shown that the total relative power at the output ports is 0.96 with an excess loss of 0.28 dB and power imbalance of 0.13 dB.

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Dini Fithriaty Puspohadiningrum, Anita Ratnasari, Maratul Hamidah, Muhammad Raditya Gumelar, Nji Raden Poespawati, and Retno Wigajatri Purnamaningsih "Multimode interference-Based 1 x 8 optical power splitter using GaN semiconductors", Proc. SPIE 11044, Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018), 110440P (11 April 2019); https://doi.org/10.1117/12.2503369

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KEYWORDS

Brain-machine interfaces

Gallium nitride

Waveguides

Refractive index

Sapphire

Semiconductors

Telecommunications

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