M. Kanskar,1 C. Bai,1 L. Bao,1 Z. Chen,1 C. Chiong,1 M. DeFranza,1 K. Fortier,1 M. Hemenway,1 S. Li,1 E. Martin,1 J. Small,1 B. Tomakian,1 W. Urbanek,1 B. Wilkins,1 J. Zhang1
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In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using new extra Reduced-mode (x-REM) diode design providing a record ~363 W output from a 2×12 nLIGHT element® in 105 μm diameter fiber. There is also an increasing demand for low size, weight and power-consumption (SWaP) fiber-coupled diodes for compact High Energy Laser (HEL) systems for defense and industrial applications. Using thirty single emitters that were geometricallyand polarization-combined, we have demonstrated 600 watts and 62% efficiency at in 225 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively. Furthermore, we have increased the number of chips to forty and increased the output power to 1kW and 52% in the same fiber diameter and numerical aperture. This results in a fiber-coupled package with specific mass and volume of <0.18 kg/kW and <0.27 cm3/W, respectively.
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M. Kanskar, C. Bai, L. Bao, Z. Chen, C. Chiong, M. DeFranza, K. Fortier, M. Hemenway, S. Li, E. Martin, J. Small, B. Tomakian, W. Urbanek, B. Wilkins, J. Zhang, "High brightness diodes and 600W 62% efficient low SWaP fiber-coupled package," Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620A (2 March 2020); https://doi.org/10.1117/12.2547538