Presentation + Paper
2 March 2020 Pulse laser diode modules for high-power, high-frequency operation
Author Affiliations +
Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 112620H (2020) https://doi.org/10.1117/12.2546313
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
The results of research and development of a pulse laser module are presented. The aim was to create and a compact pulse laser source with a peak power of more than 10 W for optical pulses of 10 ns - 10 μs duration, emitting in spectral range 900-1600 nm. Pulsed modules were based on MOCVD-grown edge-emitting multimode semiconductor lasers integrated with a pulse pumping board. It was shown that the laser output characteristics can be optimized via a series resistance in the laser pump circuit. The 1550 nm wavelength modules with free-space outputs showed power levels of 15 and 25 W, for 1 μs and 100 ns pulses respectively, at 25° C temperature with a regular pulse shape.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitrii Veselov, Yulia Bobretsova, Aleksandr Klimov, Aleksandr Bondarev, Andrey Lyutetskiy, Vladislav Strelets, Sergey Slipchenko, Nikita Pikhtin, and Peter Kop'ev "Pulse laser diode modules for high-power, high-frequency operation", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620H (2 March 2020); https://doi.org/10.1117/12.2546313
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Resistors

Pulsed laser operation

Free space optics

High power lasers

Inductance

Laser development

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