Presentation
9 March 2020 Thick HVPE growth of ZnSe on GaAs and OP-GaAs templates for nonlinear frequency conversion (Conference Presentation)
Author Affiliations +
Abstract
We discuss low-pressure HVPE growth of ZnSe on GaAs substrates (~350 µm thick) and on OP-GaAs templates (~115 µm thick) that achieved single-crystalline quality ZnSe layers which will be used to develop OP-ZnSe QPM structures for nonlinear frequency conversion devices. Material characterization techniques including SEM, HR-XRD, XTEM, and PL have been used to verify that the ZnSe grown by HVPE has a superior quality to the commercially available ZnSe substrates. Current focus is to obtain thicknesses beyond 500 µm using plain and OP templates for frequency conversion in the MLWIR.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shivashankar Vangala, Meagan Parker, Duane Brinegar, Vladimir Tassev, and Michael Snure "Thick HVPE growth of ZnSe on GaAs and OP-GaAs templates for nonlinear frequency conversion (Conference Presentation)", Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112640V (9 March 2020); https://doi.org/10.1117/12.2544996
Advertisement
Advertisement
KEYWORDS
Gallium arsenide

Nonlinear frequency conversion

Nonlinear optics

Frequency conversion

Mid-IR

Infrared radiation

Long wavelength infrared

Back to Top