PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We discuss low-pressure HVPE growth of ZnSe on GaAs substrates (~350 µm thick) and on OP-GaAs templates (~115 µm thick) that achieved single-crystalline quality ZnSe layers which will be used to develop OP-ZnSe QPM structures for nonlinear frequency conversion devices. Material characterization techniques including SEM, HR-XRD, XTEM, and PL have been used to verify that the ZnSe grown by HVPE has a superior quality to the commercially available ZnSe substrates. Current focus is to obtain thicknesses beyond 500 µm using plain and OP templates for frequency conversion in the MLWIR.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Shivashankar Vangala, Meagan Parker, Duane Brinegar, Vladimir Tassev, Michael Snure, "Thick HVPE growth of ZnSe on GaAs and OP-GaAs templates for nonlinear frequency conversion (Conference Presentation)," Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112640V (9 March 2020); https://doi.org/10.1117/12.2544996