The defect corrections to the polarization and dielectric functions of conduction electrons in a quantum well are first calculated. Following this, we derive the first two moment equations from the semi-classical Boltzmann transport theory and apply them to explore defect effects on magneto-transport of electrons. In addition, we obtain analytically momentum-relaxation time and mobility tensor of electrons by using the defect-corrected polarization function. Based on quantum-statistical theory, we further investigate the defect capture and charging dynamics by employing a hydrogen-like quantum-mechanics model for point defects and going beyond a short-range δ-function for their probability functions. Finally, both the capture and relaxation rates, as well as the density for captured electrons, are studied as functions of temperature, subband-electron density and different types of defects, which can be utilized for quantifying burst noise in transistors and blinking noise in photo-detectors.
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