Extending EUV lithography for DRAM applications

Gijsbert Rispens; Claire Van Lare; Dorothe Oorschot; Rik Hoefnagels; Shih-Hsiang Liu; Willem Van Mierlo; Nadia Zuurbier; Zoi Dardani; Ziyang Wang; Mark John Maslow; Jo Finders; Roberto Fallica; Andreas Frommhold; Eric Hendrickx; Ardavan Niroomand; Scott Light

doi:10.1117/12.2552067

12 May 2020 Extending EUV lithography for DRAM applications

Gijsbert Rispens, Claire Van Lare, Dorothe Oorschot, Rik Hoefnagels, Shih-Hsiang Liu, Willem Van Mierlo, Nadia Zuurbier, Zoi Dardani, Ziyang Wang, Mark John Maslow, Jo Finders, Roberto Fallica, Andreas Frommhold, Eric Hendrickx, Ardavan Niroomand, Scott Light

Author Affiliations +

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113230U (2020) https://doi.org/10.1117/12.2552067
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

In this paper we show experimental verification of the feasibility of printing pitch 40x70nm hexagonal holes using EUV single patterning. We show that at a local CDU (LCDU) of 2.7nm and an exposure dose of 54 mJ/cm² a defect rate smaller than 7x10^-9 is observed. This result was enabled by optimization of the illumination source and improvements in the resist. Resist selection identified multiple candidates that show a promising LCDU performance and optimization of the processing conditions resulted in improved performance. Experimental validation of the defect performance was done using HMI eP5 on the baseline process. Assessment of the LCDU performance for EUV single expose at pitches beyond 40x70nm, showed promising results.

Conference Presentation

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Gijsbert Rispens, Claire Van Lare, Dorothe Oorschot, Rik Hoefnagels, Shih-Hsiang Liu, Willem Van Mierlo, Nadia Zuurbier, Zoi Dardani, Ziyang Wang, Mark John Maslow, Jo Finders, Roberto Fallica, Andreas Frommhold, Eric Hendrickx, Ardavan Niroomand, and Scott Light "Extending EUV lithography for DRAM applications", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230U (12 May 2020); https://doi.org/10.1117/12.2552067

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