Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)

Hojin Kim; Yun Han; Mingmei Wang; Andrew Metz; Peter Biolsi

doi:10.1117/12.2552039

24 March 2020 Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)

Hojin Kim, Yun Han, Mingmei Wang, Andrew Metz, Peter Biolsi

Proceedings Volume 11329, Advanced Etch Technology for Nanopatterning IX; 1132908 (2020) https://doi.org/10.1117/12.2552039
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

We performed molecular dynamics (MD) simulation to study the evaluation of silicon germanium alloy (SiGe) damage with oxidation behavior after plasma gas treatments. Our study provides a fundamental understanding of the atomistic/ molecular level of SiGe behavior after plasma etching of a contact etch stop layer (CESL). We found that simulation results are very good agreement with experimental data from Secondary ion mass spectroscopy (SIMS) and Transmission Electron Microscope (TEM)/ Energy-dispersive X-ray spectroscopy (EDS) and the detailed atom and bond analysis are obtained to study the surface reaction during the plasma process

Conference Presentation

Citation Download Citation

Hojin Kim, Yun Han, Mingmei Wang, Andrew Metz, and Peter Biolsi "Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)", Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 1132908 (24 March 2020); https://doi.org/10.1117/12.2552039

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