Paper
18 December 2019 Multi-layer stacks of GaN/n-Al0.5GaN self-assembled quantum dots grown by metal-organic chemical vapor deposition
Fei Wu, Zhiqiang Qi
Author Affiliations +
Abstract
The growth of multi-layer stacks of GaN QDs on n-doped Al0.5GaN template by metal organic chemical vapor phase deposition has been investigated. A two-step growth technique consisting of a low temperature method and high temperature method has been employed to deposit the n-Al0.5GaN spacer-layer over GaN QDs. The third-layer GaN quantum dots with 22nm low temperature and 15nm high temperature Al0.5GaN spacer-layer show uniform-size and excellent optical performance. The photo-luminescence suggests that the peak intensity of GaN QDs with two-step grown spacer-layer has been overall enhanced significantly compared to the low temperature grown spacer-layer with the same thickness.
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Fei Wu and Zhiqiang Qi "Multi-layer stacks of GaN/n-Al0.5GaN self-assembled quantum dots grown by metal-organic chemical vapor deposition", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 1133413 (18 December 2019); https://doi.org/10.1117/12.2547648
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KEYWORDS
Gallium nitride

Quantum dots

Atomic force microscopy

Aluminum

Luminescence

Surface roughness

Aluminum nitride

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