Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy

Weon G. Jeong; E. P. Menu; P. D. Dapkus

doi:10.1117/12.961988

28 November 1989 Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy

Weon G. Jeong, E. P. Menu, P. D. Dapkus

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961988
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

The growth behavior of InP and InAs by thermal atomic layer epitaxy is described. The epilayers were grown in the range 320°C-370°C where the growth is predominantly controlled by surface reactions. For InAs, the growth rate strongly saturates at a growth temperature of 340°C. The growth rate is a strong function of alkyl exposure time for the same integrated alkyl exposure during the cycle. This dependence on exposure time is proposed to be caused by steric hindrance effects of the initial adsorbates and the low surface reaction rates of the alkyls at these temperatures. For InP, the growth rate shows saturation at 320°C but does not saturate at higher temperatures. To achieve saturation at this temperature, a PH3 exposure of one order of magnitude higher than the AsH3 exposure required for InAs atomic layer epitaxy is needed. Contrary to InAs, the growth rate does not saturate at 340°C. The difference of saturation behavior between InP and InAs is thought to be due to lower surface reactivity of PH3 which leads to the formation of In droplets and a higher decomposition rate of In alkyls on P than on As.

Citation Download Citation

Weon G. Jeong, E. P. Menu, and P. D. Dapkus "Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961988

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