Indium Phosphide Solar Cells Made By Closed-Ampoule Diffusion Of Sulphur Into Cadmium-Doped Inp Substrates: Dependence Of Cell Characteristics On Diffusion Temperature And Time

Mircea Faur; Maria Faur; Chandra Goradia; Manju Goradia; Navid Fat emi; David Brinker; Ralph Thomas

doi:10.1117/12.962035

28 November 1989 Indium Phosphide Solar Cells Made By Closed-Ampoule Diffusion Of Sulphur Into Cadmium-Doped InP Substrates: Dependence Of Cell Characteristics On Diffusion Temperature And Time

Mircea Faur, Maria Faur, Chandra Goradia, Manju Goradia, Navid Fat emi, David Brinker, Ralph Thomas

Author Affiliations +

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962035
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

We have studied the dependence of solar cell performance characteristics on diffusion temperature and time, for cells made by the closed-ampoule thermal diffusion of S into Cd-doped InP substrates of starting doping 1.7x 1016 cm-3. Diffusions were performed at 600, 625, 650, 700, and 725°C for 3 hours, 675°C for 1, 2, 3 and 4 hours, and, on specially treated substrates with phosphorus-rich surfaces, at 650 and 660°C for 3 hours. We have measured Isc, Voc, FF, η, spectral response, J0 and A factor, series and shunt resistances, and emitter sheet resistance and specific contact resistance of front metallization. Our results indicate that for best solar cell efficiency, the diffusion temperature should be between 650 and 675°C and the diffusion time should be from 1 to 3 hours, for our Cd-doped material.

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Mircea Faur, Maria Faur, Chandra Goradia, Manju Goradia, Navid Fat emi, David Brinker, and Ralph Thomas "Indium Phosphide Solar Cells Made By Closed-Ampoule Diffusion Of Sulphur Into Cadmium-Doped InP Substrates: Dependence Of Cell Characteristics On Diffusion Temperature And Time", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962035

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