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New light emitting diodes at 1.00 μm obtained from synthesized InP : Yb bulk crystal are studied. The n-type Yb doped bulk material was grown by gradient freeze method. Mg+ ions were implanted in this material for p-type layer. The indepth localization of the junction is not critical. Photoluminescence and electroluminescence spectra are performed from 77 K to 300 K. Two peaks are observed : band edge emission (0.88 pm) and intra shell 4f-4f for Yb ions. The variation of EL intensity with diode forward current shows a Yb3+ emission about 40 times higher than band edge emission. No influence of temperature is observed on Yb3+ peak linewidth and wavelength.
H. L'Haridon,D. Moutonnet,Y. Toudic,M. Salvi, andP. N. Favennec
"New LED In Synthesized InP : Yb Material", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962031
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H. L'Haridon, D. Moutonnet, Y. Toudic, M. Salvi, P. N. Favennec, "New LED In Synthesized InP Yb Material," Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962031