Paper
28 November 1989 XPS, Auger And SEM Analysis Of The InP Surface After Closed-Ampoule Diffusion With Sulphur At Several Diffusion Temperatures
Maria Faur, Mircea Faur, Manju Ghalla, Chandra Goradia, Douglas Jayne, Frank Honecy, Irving Weinberg
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962039
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
In an attempt to identify the factors which limit the performance of InP solar cells made by the closed-ampoule diffusion of sulphur into p-type InP substrates, and in order to optimize the fabrication process, we have done a detailed analysis of the InP surface and of the diffused emitter region using XPS, Auger, SEM and EDAX for diffusion temperatures of 600, 625, 650, 675, 700 and 725°C for a fixed diffusion time of 3 hours, and diffusion times of 1, 2, 3, and 4 hours for a fixed temperature of 675°C. In this paper, we present the results of this analysis, showing how the morphology and chemical composition of the InP surface layer changes with the diffusion temperature and identifying the possible mechanisms which limit the photocurrent and the open circuit voltage of solar cells fabricated using the closed-ampoule diffusion process.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maria Faur, Mircea Faur, Manju Ghalla, Chandra Goradia, Douglas Jayne, Frank Honecy, and Irving Weinberg "XPS, Auger And SEM Analysis Of The InP Surface After Closed-Ampoule Diffusion With Sulphur At Several Diffusion Temperatures", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962039
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