22 August 2020Tuning the properties of ultrathin oxygen-plasma-grown aluminum oxide films for high-capacitance hybrid gate dielectrics in organic thin-film transistors
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Ultrathin hybrid gate dielectrics composed of an inorganic metal oxide and an organic self-assembled monolayer are useful for low-voltage organic thin-film transistors by providing a large gate dielectric capacitance and minimizing gate leakage. In this work, we focus on the role of the thin metal oxide in the hybrid gate dielectric, by investigating a plasma-grown aluminum oxide and the effects of the plasma power and duration on the growth of the aluminum oxide and the resulting properties of the gate dielectric in organic TFTs.
Michael Geiger,R. Thomas Weitz,Guido Schmitz,Hagen Klauk, andRachana Acharya
"Tuning the properties of ultrathin oxygen-plasma-grown aluminum oxide films for high-capacitance hybrid gate dielectrics in organic thin-film transistors", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760F (22 August 2020); https://doi.org/10.1117/12.2568458
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Michael Geiger, R. Thomas Weitz, Guido Schmitz, Hagen Klauk, Rachana Acharya, "Tuning the properties of ultrathin oxygen-plasma-grown aluminum oxide films for high-capacitance hybrid gate dielectrics in organic thin-film transistors," Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760F (22 August 2020); https://doi.org/10.1117/12.2568458