Next generation high volume EUV manufacturing for 7, 5 and 3 nm nodes drives advanced performance in material design, specification and selection. Materials are currently adapted for ever increasingly complex lithographic design with tight tolerances; some trade-offs leading to sub-optimal performance. We consider a new class of materials for the EUV photomask and optics that have the potential for advanced lithographic performance. The overarching factors that drive adoption include performance, lifetime, manufacturability, cost of operations and cost of consumables. As such any new selection in materials must demonstrate robustness against these specifications. Astrileux is sponsored by National Science Foundation and CASIS.
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