Progress in EUV resist screening towards the deployment of high-NA lithography

T. Allenet; X. Wang; M. Vockenhuber; C.-K. Yeh; I. Mochi; J. G. Santaclara; L. Van Lent-Protasova; Y. Ekinci

doi:10.1117/12.2583983

29 March 2021 Progress in EUV resist screening towards the deployment of high-NA lithography

T. Allenet, X. Wang, M. Vockenhuber , C.-K. Yeh, I. Mochi, J. G. Santaclara, L. Van Lent-Protasova, Y. Ekinci

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090J (2021) https://doi.org/10.1117/12.2583983
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

The development of EUV resists is one of the major challenges for the deployment of high-NA EUV lithography, which is on the roadmap for high-volume manufacturing of future semiconductor technology nodes. Resist performance is admittedly governed by a resolution-roughness-sensitivity (RLS) tradeoff. This study reports on the EUV resist progress achieved during the last year in the framework of the resist screening program by PSI and ASML. An extensive performance characterization of different resists was carried out using the XIL-II beamline EUV interference lithography (EUV-IL) tool at the Swiss Light Source (SLS). We present the upgraded screening metrology used in 2020 at PSI enabling increased confidence in results. We report material performance towards patterning lines/spaces features with respect to the key parameters of RLS: half-pitch (HP), dose-to-size (DtS), line-width-roughness (LWR), as well as Z-factor for overall performance consideration. General progress in EUV resist development is reviewed by considering several resist platforms available today from different vendors. Different molecular and chemically amplified resist materials are demonstrated as viable for 16 nm resolution technology nodes. One chemically-amplified resist vendor shows suitable materials for 13-nm-resolution technologies while exhibiting potential for further downscaling. We present different metal-oxide resists screening with resolutions down to 10 nm HP. We finally discuss the overall progress of materials achieved between 2019 and 2020 towards reaching high-NA.

Conference Presentation

Citation Download Citation

T. Allenet, X. Wang, M. Vockenhuber , C.-K. Yeh, I. Mochi, J. G. Santaclara, L. Van Lent-Protasova, and Y. Ekinci "Progress in EUV resist screening towards the deployment of high-NA lithography", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090J (29 March 2021); https://doi.org/10.1117/12.2583983

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