1Institute of Japan, National Institute of Advanced Industrial Science and Technology (Japan) 2National Institute of Advanced Industrial Science and Technology (Japan)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
In this study, we developed a methodology to evaluate scanning electron microscopy (SEM)-based line edge roughness (LER) metrology. In particular, we used a metrological tilting atomic force microscopy (tilting-mAFM) as LER reference metrology. We analyzed the height-height correlation function (HHCF) of SEM line-edge profiles combining averaging and unbiased correction methods. The direct comparison of our method with tilting-mAFM enabled a precise evaluation of the SEM-based LER metrology. We demonstrated that a combination of unbiased HHCF and averaging methods with appropriate condition enabled relatively precise measurement of three roughness parameters. We observed that, for precise roughness evaluation, reducing noise in the line-edge profiles is important before performing the HHCF analysis and unbiased correction.
Ryosuke Kizu,Ichiko Misumi,Akiko Hirai, andSatoshi Gonda
"Evaluating SEM-based LER metrology using a metrological tilting-AFM", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161117 (22 February 2021); https://doi.org/10.1117/12.2583475
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Ryosuke Kizu, Ichiko Misumi, Akiko Hirai, Satoshi Gonda, "Evaluating SEM-based LER metrology using a metrological tilting-AFM," Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161117 (22 February 2021); https://doi.org/10.1117/12.2583475