Germanium/germanium-tin heterojunction phototransistors: towards high-efficient

Xin Yu Li; Yu Fei Liu; Jia Yao Wang; Wei Wang; Ming Bin Yu

doi:10.1117/12.2584197

4 December 2020 Germanium/germanium-tin heterojunction phototransistors: towards high-efficient

Xin Yu Li, Yu Fei Liu, Jia Yao Wang, Wei Wang, Ming Bin Yu

Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 1161702 (2020) https://doi.org/10.1117/12.2584197
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China

Abstract

We report the demonstration of Si-based waveguide Ge_1-xSn_x photodetector (PD) at L-band (1565-1625 nm), U-band (1625-1675 nm), and 2μm light detection, optical and electrical properties are studied by using simulation models. With introduction of 4.5% Sn into Ge, the GeSn waveguide PD with evanescent coupling exhibits a high responsivity of 1.25 A/W, dark current is lower than 12 nA. This work provides a new choice for future infrared detection, beneficial to needs of broadband spectrum communication, and compatible with CMOS circuits.

Citation Download Citation

Xin Yu Li, Yu Fei Liu, Jia Yao Wang, Wei Wang, and Ming Bin Yu "Germanium/germanium-tin heterojunction phototransistors: towards high-efficient", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 1161702 (4 December 2020); https://doi.org/10.1117/12.2584197

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